Crosstalk measurement of DOS-like switch using InP narrow deep-etched waveguides.
Identifieur interne : 002407 ( Main/Exploration ); précédent : 002406; suivant : 002408Crosstalk measurement of DOS-like switch using InP narrow deep-etched waveguides.
Auteurs : RBID : pubmed:18542619English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Indium, Phosphines.
- instrumentation : Optics and Photonics, Signal Processing, Computer-Assisted, Telecommunications.
- Equipment Design, Equipment Failure Analysis, Semiconductors.
Abstract
We report on the performance of an optical switch based on the use of narrow deep-etched InP waveguides. A DOS-like structure has been designed and fabricated. First characterization results are reported. They show an optical crosstalk value close to -20dB.
PubMed: 18542619
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A DOS-like structure has been designed and fabricated. First characterization results are reported. They show an optical crosstalk value close to -20dB.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">18542619</PMID><DateCreated><Year>2008</Year><Month>06</Month><Day>10</Day></DateCreated><DateCompleted><Year>2008</Year><Month>08</Month><Day>21</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>16</Volume><Issue>8</Issue><PubDate><Year>2008</Year><Month>Apr</Month><Day>14</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>Crosstalk measurement of DOS-like switch using InP narrow deep-etched waveguides.</ArticleTitle><Pagination><MedlinePgn>5181-5</MedlinePgn></Pagination><Abstract><AbstractText>We report on the performance of an optical switch based on the use of narrow deep-etched InP waveguides. A DOS-like structure has been designed and fabricated. First characterization results are reported. They show an optical crosstalk value close to -20dB.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Lesecq</LastName><ForeName>M</ForeName><Initials>M</Initials><Affiliation>Institut d'Electronique, de Microélectronique et de Nanotechnologie, UMR 8520, Université des Sciences et Technologies de Lille, BP60069, 59652 Villeneuve d'Ascq cedex, France. marie.lesecq@ed.univ-lille1.fr</Affiliation></Author><Author ValidYN="Y"><LastName>Beaugeois</LastName><ForeName>M</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Maricot</LastName><ForeName>S</ForeName><Initials>S</Initials></Author><Author ValidYN="Y"><LastName>Vilcot</LastName><ForeName>J-P</ForeName><Initials>JP</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Express</MedlineTA><NlmUniqueID>101137103</NlmUniqueID><ISSNLinking>1094-4087</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>Phosphines</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>22398-80-7</RegistryNumber><NameOfSubstance>indium phosphide</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Optics and Photonics</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Phosphines</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Signal Processing, Computer-Assisted</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Telecommunications</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="pubmed"><Year>2008</Year><Month>6</Month><Day>11</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2008</Year><Month>8</Month><Day>22</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2008</Year><Month>6</Month><Day>11</Day><Hour>9</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">157011</ArticleId><ArticleId IdType="pubmed">18542619</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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